JPH0584051B2 - - Google Patents

Info

Publication number
JPH0584051B2
JPH0584051B2 JP58028571A JP2857183A JPH0584051B2 JP H0584051 B2 JPH0584051 B2 JP H0584051B2 JP 58028571 A JP58028571 A JP 58028571A JP 2857183 A JP2857183 A JP 2857183A JP H0584051 B2 JPH0584051 B2 JP H0584051B2
Authority
JP
Japan
Prior art keywords
thin film
glow discharge
disilane
conductivity
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58028571A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59155122A (ja
Inventor
Nobuhiro Fukuda
Makoto Konagai
Yutaka Oohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP58028571A priority Critical patent/JPS59155122A/ja
Publication of JPS59155122A publication Critical patent/JPS59155122A/ja
Publication of JPH0584051B2 publication Critical patent/JPH0584051B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP58028571A 1983-02-24 1983-02-24 半導体薄膜およびその形成方法 Granted JPS59155122A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028571A JPS59155122A (ja) 1983-02-24 1983-02-24 半導体薄膜およびその形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028571A JPS59155122A (ja) 1983-02-24 1983-02-24 半導体薄膜およびその形成方法

Publications (2)

Publication Number Publication Date
JPS59155122A JPS59155122A (ja) 1984-09-04
JPH0584051B2 true JPH0584051B2 (en]) 1993-11-30

Family

ID=12252303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028571A Granted JPS59155122A (ja) 1983-02-24 1983-02-24 半導体薄膜およびその形成方法

Country Status (1)

Country Link
JP (1) JPS59155122A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2609844B2 (ja) * 1985-06-10 1997-05-14 三洋電機株式会社 エピタキシヤル成長方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1983 *

Also Published As

Publication number Publication date
JPS59155122A (ja) 1984-09-04

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